光刻胶
光引发剂
平版印刷术
原位
材料科学
钙钛矿(结构)
量子点
光电子学
纳米技术
复合材料
化学
聚合物
结晶学
单体
有机化学
图层(电子)
作者
Shunsheng Wei,Jingrun Yuan,Gaoling Yang,Haizheng Zhong,Yuping Dong,Jianbing Shi
出处
期刊:ACS applied nano materials
[American Chemical Society]
日期:2024-04-02
标识
DOI:10.1021/acsanm.3c06297
摘要
Precise pixel control of quantum dots (QDs) offers unparalleled opportunities for various display applications, such as the OLED and Micro-LED. However, precise selective patterning of QDs is still a challenge due to the lack of a design methodology. Therefore, the aim of this study was thus to develop a photoinitiator-grafted oligomer for "on demand" control of active free radicals to improve the line edge roughness in QD patterning. This photosensitive oligomer was constructed by grafting the photosensitive benzophenone structure onto a phenolic resin oligomer, thus resulting in the confinement of active free radicals and highly selective photolithography. As a proof of concept, we have demonstrated high-quality QD patterns with high resolution and low edge roughness by using direct in situ photolithography. This work opens an avenue for the precise design and synthesis of QD photoresists, improving the precision of QD patterning for display applications.
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