共发射极
光电子学
晶体管
材料科学
电气工程
工程类
电压
作者
Chi Liu,Xinzhe Wang,Cong Shen,Lai‐Peng Ma,Xu-qi Yang,Yue Kong,Wei Ma,Yan Liang,Shun Feng,Xiaoyue Wang,Yu-Ning Wei,Xi Zhu,Bo Li,Changze Li,Shichao Dong,Lining Zhang,Wencai Ren,Dongming Sun,Hui‐Ming Cheng
出处
期刊:Nature
[Springer Nature]
日期:2024-08-14
卷期号:632 (8026): 782-787
被引量:1
标识
DOI:10.1038/s41586-024-07785-3
摘要
Hot-carrier transistors are a class of devices that leverage the excess kinetic energy of carriers. Unlike regular transistors, which rely on steady-state carrier transport, hot-carrier transistors modulate carriers to high-energy states, resulting in enhanced device speed and functionality. These characteristics are essential for applications that demand rapid switching and high-frequency operations, such as advanced telecommunications and cutting-edge computing technologies
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