Redox‐Mediated Single‐Molecule Transistor with A Subthreshold Swing Down To 120 mV Decade−1

Abstract The single‐molecule electronic devices offer the ultimate solution to miniaturize integrated circuits, and subthreshold swing (SS) is the key indicator of the power consumption for single‐molecule transistors but is still quite restricted. In this study, the redox‐mediated single‐molecule transistor with a SS down to 120 mV decade −1 in the faradaic potential region via the electrochemical‐STM break junction (EC‐STM‐BJ) technique is fabricated. With an off‐state leakage current of less than 10 p A and an on/off ratio of 100, the balance between low static power consumption and a high switching ratio is achieved. The theoretical investigations reveal that the conductance tuning is from the difference of transmission in the redox process. The study provides a new strategy for the design of single‐molecule transistors with promising SS, which is essential for the potential application of single‐molecule devices.