材料科学
神经形态工程学
记忆电阻器
自旋电子学
量子隧道
铁电性
光电子学
磁电阻
兴奋剂
纳米技术
电压
非易失性存储器
压电响应力显微镜
凝聚态物理
电气工程
磁场
电介质
铁磁性
计算机科学
人工神经网络
物理
工程类
量子力学
机器学习
作者
Abir Nachawaty,Tongxin Chen,Fatima Ibrahim,Yuchen Wang,Ya-Fei Hao,Kevin Dalla Francesca,Priyanka Tyagi,Antonio Da Costa,Anthony Ferri,Chuanchuan Liu,Xiaoguang Li,Mairbek Chshiev,Sylvie Migot,Laurent Badie,Walaa Jahjah,Rachel Desfeux,Jean‐Christophe Le Breton,Philippe Schieffer,Arnaud Le Pottier,Thomas Gries,Xavier Devaux,Yuan Lü
标识
DOI：10.1002/adma.202401611
摘要
Integrating tunneling magnetoresistance (TMR) effect in memristors is a long-term aspiration because it allows to realize multifunctional devices, such as multi-state memory and tunable plasticity for synaptic function. However, the reported TMR in different multiferroic tunnel junctions is limited to 100%. This work demonstrates a giant TMR of -266% in La
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