Perovskites and their constructed near-infrared photodetectors

Organo-metal halide perovskites have emerged as promising candidates in photoelectric detection. Although most existing research and reviews have concentrated on perovskite-based photodetectors for high-energy X-rays and visible light applications, studies on perovskite-based near-infrared (NIR) photodetectors remain scarce. Notably, hybrid perovskites fabricated using either pure Sn or a mixed Sn/Pb can achieve the lowest bandgap of 1.21 eV. This characteristic enables exceptional NIR photoresponse within the 780 to 1050 nm range, offering advantages in terms of high sensitivity, minimal dark current, and an elevated detection rate. To enhance the performance and stability of narrowed bandgap Sn-based perovskite photodetectors, researchers have developed a series of strategies, including reduction additive, defect passivation, and interface regulation. Despite these advancements, Sn-based perovskites have yet to surpass the NIR response range of 1.1 eV, typical of Si-based photodetectors. In pursuit of further extending and amplifying the NIR and infrared response of perovskite, scientists have investigated integrating organic materials, crystalline silicon/germanium, III-V compounds (e.g., GaAs), and IV-VI quantum dots (e.g., PbSe, PbS QDs) with perovskite. These efforts aim to create complementary heterostructures for spectrum response for extending the NIR light response of perovskite photodetectors. This review encapsulates the current research status of perovskite NIR detectors and explores effective methods for expanding their spectral range. Furthermore, it envisions the prospective advancements in NIR photodetector technology based on perovskite materials, underscoring the potential for significant breakthroughs in this field.