Highly sensitive performance Flexible Deep UV Photodetectors Based on CsCu2I3/Mg0.2Zn0.8O Bulk Heterojunction

Flexible deep ultraviolet (UV) photodetectors have received extensive attention due to low background noise and high reliability in operation environments. Herein, we demonstrate a highly performance deep UV photodetector based on CsCu ₂ I ₃ /Mg _0.2 Zn _0.8 O bulk heterojunction. Mg _0.2 Zn _0.8 O quantum dots as electron transfer sites can facilitate the transfer of photogenerated carriers to improve the device performance. As a result, the CsCu ₂ I ₃ /Mg _0.2 Zn _0.8 O based photodetector exhibits high responsivity of 1.12 A/W and specific detectivity of 3.26×10 ¹² Jones. Moreover, the flexible photodetector maintains relatively high performance after 2000 times bending cycles at curvature radius of 5 mm. Our work provides a reliable and low-cost approach for highly performance flexible deep UV photodetection.