材料科学
化学气相沉积
光伏系统
等离子体
沉积(地质)
等离子体增强化学气相沉积
纳米技术
工程物理
化学工程
光电子学
电气工程
工程类
量子力学
沉积物
生物
物理
古生物学
作者
Jeyakumar Ramanujam,Amit Verma
出处
期刊:Materials Express
[American Scientific Publishers]
日期:2012-09-01
卷期号:2 (3): 177-196
被引量:41
标识
DOI:10.1166/mex.2012.1073
摘要
Amorphous silicon films are currently receiving a worldwide renewed and intense research and commercial focus for low-cost solar power generation. In this article we review the history and current status of hydrogenated amorphous silicon films (a-Si:H) for thin film photovoltaics, and the role of intrinsic a-Si:H films in heterojunction (a-Si:H/c-Si) solar cells. The focus of this article is on plasma enhanced chemical vapor deposition (PECVD) of these films from silane (SiH4). Very high frequency (VHF) PECVD deposition and its limitations are discussed. Properties and requirements of intrinsic and doped a-Si:H films are presented. Light-induced degradation of a-Si:H films are reviewed in detail. Current status of single junction a-Si:H solar cells and factors influencing cell performance are also discussed. Since the efficiency and stability of thin film a-Si:H solar cells are low, a-Si:H films can be successfully used in other solar cell technologies such as c-Si based back heterojunction solar cells, where doped a-Si:H films are used at the rear side of the substrate for emitter and back surface field.
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