锗
硅
材料科学
冶金
铸造
掺杂剂
硅锗
兴奋剂
光电子学
作者
R.J. Baughman,G. L. McVay,R. A. Lefever
标识
DOI:10.1016/0025-5408(74)90139-1
摘要
Large chill cast ingots of silicon-germanium produced from melts that were not stirred contained two major alloys, one rich in silicon and one rich in germanium, in addition to a composition continuum. While stirring produced little change in distribution of Si/Ge ratios, inductive stirring did result in ingots that varied in composition but in a more uniform manner. In all cases, dopants were uniformly distributed throughout the cast ingots.
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