材料科学
薄脆饼
MOSFET
光电子学
场效应晶体管
热导率
晶体管
硅
半导体
复合材料
电气工程
电压
工程类
作者
Hiroshi Shinohara,Hiroyuki Kinoshita,Masahiro Yoshimoto
摘要
Single-crystalline Si wafers were directly bonded to single-crystalline 6H-SiC wafers (Si-on-SiC), followed by thinning of the Si wafers to around 1μm. A Si metal-oxide-semiconductor field-effect transistor (MOSFET) was then fabricated on the Si layer. In a high-temperature atmosphere (∼300°C), the channel mobility of a Si MOSFET on a conventional Si wafer degraded by around 80%. The Si MOSFET fabricated on the Si-on-SiC wafer, however, showed almost no degradation in its channel mobility from heating. This confirmed that the high thermal conductivity of single-crystalline 6H-SiC improves the heat dissipation performance of Si MOSFETs.
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