Double Hall sensor structure reducing voltage offset

In this paper, we report on the double Hall sensor structure (DHSS) in which the voltage offset can be effectively reduced. The DHSS is composed of two standard Hall sensors that are activated with two currents from electrically independent current sources. The operation principle of the DHSS is explained in detail, and the concluded properties of the DHSS are confirmed in the experimental part of the paper. The measurements are performed on DHSSs based on InSb thin films. The offset is reduced by about three orders of magnitude. The minimum value of the reduced offset obtained is 10 μV. It appears that the minimum reduced offset is limited by the electric noise. The advantage of DHSS is that it can be manufactured with the standard thin film technology enabling effective miniaturization of the system. The DHSS can effectively be used for the measurements of the Hall effect in ultra-thin layers containing the two dimensional electron gas, such as the epitaxial graphene.