On the kinetics of MoSe2 interfacial layer formation in chalcogen-based thin film solar cells with a molybdenum back contact

We have studied the temperature dependent kinetics of MoSe2 formation between molybdenum and Cu2ZnSnSe4 (CZTSe) films during annealing in the presence of Se. CZTSe is an emerging light-absorbing material for thin film solar cell applications, and thermal treatment of this layer constitutes a critical part of the device processing. The formation of MoSe2 in this system is modeled using a three step mechanism—diffusion of Se through CZTSe, diffusion of Se through MoSe2, and reaction between Se and Mo. Applying the results of the model to experimental results reveals that the MoSe2 formation is limited by the diffusion of Se through the CZTSe layer.