原子层沉积
退火(玻璃)
氧化物
材料科学
金属
热氧化
分析化学(期刊)
场效应晶体管
等效氧化层厚度
宽禁带半导体
图层(电子)
无机化学
化学工程
化学
晶体管
光电子学
纳米技术
冶金
栅氧化层
环境化学
电压
工程类
物理
量子力学
作者
Changhyun Kim,Jeong Hyun Moon,Jeong Hyuk Yim,Do Hyun Lee,Jong-Ho Lee,Hun Hee Lee,Hyeong Joon Kim
摘要
The electrical properties of thermally grown and atomic-layer-deposition (ALD) oxides, followed by nitridation treatment, on 4H-SiC substrate were compared. The nitridation treatment was performed with post oxidation annealing in NO atmosphere (NO POA). The best electrical characteristics of the thermally grown and ALD oxides were observed at 120 and 180 min NO POA, respectively. The NO POA treated ALD oxide showed extremely low interface trap density (Dit), less than 1011 eV−1 cm−1. A metal-oxide-semiconductor field-effect-transistor with the ALD oxide showed high field effect mobility, especially in the high electric field region. The reasons for these superior results were also discussed.
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