欧姆接触
超晶格
二极管
材料科学
异质结
光电子学
凝聚态物理
兴奋剂
半导体
纳米技术
物理
图层(电子)
作者
Jay M. Shah,Y.-L. Li,Th. Gessmann,E. Fred Schubert
摘要
Diode ideality factors much higher than the expected values of 1.0 to 2.0 have been reported in GaN-based p-n junctions. It is shown that moderately doped unipolar heterojunctions as well as metal-semiconductor junctions, in particular the metal contact to p-type GaN, can increase the ideality factor to values greater than 2.0. A relation is derived for the effective ideality factor by taking into account all junctions of the diode structure. Diodes fabricated from a bulk GaN p-n junction and a p-n junction structure with a p-type AlGaN/GaN superlattice display ideality factors of 6.9 and 4.0, respectively. These results are consistent with the theoretical model and the fact that p-type AlGaN/GaN superlattices facilitate the formation of low-resistance ohmic contacts.
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