记忆电阻器
电阻器
电容器
电阻随机存取存储器
电气元件
电气工程
纳米技术
物理
计算机科学
数码产品
电感器
电子线路
电压
拓扑(电路)
材料科学
工程类
作者
Dmitri B. Strukov,Gregory S. Snider,Duncan R. Stewart,R. Stanley Williams
出处
期刊:Nature
[Springer Nature]
日期:2008-04-30
卷期号:453 (7191): 80-83
被引量:10030
摘要
Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.
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