薄膜
材料科学
氧化锡
兴奋剂
纳米晶材料
无定形固体
退火(玻璃)
载流子散射
溅射沉积
电子迁移率
载流子
锡
空位缺陷
散射
溅射
凝聚态物理
分析化学(期刊)
光电子学
纳米技术
结晶学
化学
复合材料
冶金
光学
物理
色谱法
作者
Yawei Zhou,Zhe Liu,Chunqing He,Chongshan Yin
摘要
Fluorine-doped tin oxide (FTO) thin films were prepared by a radio frequency magnetron sputtering technique. The defects and charge carrier transport behavior in FTO thin films were evaluated during the transition process from amorphous to nanocrystalline structures. The stable lattice structure in FTO thin films was obtained as the annealing temperature reached 400 °C. Positron annihilation results indicated that defect evolution in the FTO thin films was shown in two stages, formation and reduction of vacancies/vacancy clusters. The carrier mobility of the FTO thin films annealed at 600 °C was enhanced twice the amount than that of the unannealed samples. The correlation between the results obtained from positron annihilation and the Hall effect revealed the importance of defect scattering in deciding the charge carrier mobility. A defect scattering mechanism was proposed to interpret the noticeable increment of carrier mobility in FTO thin films after thermal treatment.
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