Influence of Nitrogen Concentration on Self‐Compliance Resistive Switching in Ta/SiNx/Pt RRAM Devices

In this paper, the resistive switching phenomena in CMOS‐compatible Ta/SiN x /Pt devices with different nitrogen concentrations are investigated. The SiN x resistance random‐access memory (RRAM) devices show self‐compliance RS characteristics with low operation voltage. This paper suggests that a dendric Si dangling‐bond conductive channel and a nitrogen‐rich SiN x layer formed at the Ta/SiN x interface are responsible for the self‐compliance behavior. Lower operation current and energy consumption are achieved by increasing the nitrogen concentration of the SiN x films, which can be ascribed to increase of the band gap induced by the composition variation.