光电探测器
材料科学
雾
紫外线
蓝宝石
光电子学
化学气相沉积
光学
激光器
物理
气象学
作者
Yu Xu,Zhiyuan An,Lixin Zhang,Qian Feng,Jincheng Zhang,Chunfu Zhang,Yue Hao
摘要
In this report, we demonstrate high spectral responsivity (SR) solar blind deep ultraviolet (UV) β-Ga2O3 metal-semiconductor-metal (MSM) photodetectors grown by the mist chemical-vapor deposition (Mist-CVD) method. The β-Ga2O3 thin film was grown on c-plane sapphire substrates, and the fabricated MSM PDs with Al contacts in an interdigitated geometry were found to exhibit peak SR>150A/W for the incident light wavelength of 254 nm at a bias of 20 V. The devices exhibited very low dark current, about 14 pA at 20 V, and showed sharp transients with a photo-to-dark current ratio>105. The corresponding external quantum efficiency is over 7 × 104%. The excellent deep UV β-Ga2O3 photodetectors will enable significant advancements for the next-generation photodetection applications.
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