半导体
三元运算
氮化物
半导体材料
可再生能源
纳米技术
研究开发
材料科学
锡
工程物理
光电子学
计算机科学
工程类
电气工程
冶金
古生物学
考试(生物学)
图层(电子)
生物
程序设计语言
作者
Imran Khan,Karen N. Heinselman,Andriy Zakutayev
出处
期刊:JPhys energy
[IOP Publishing]
日期:2020-04-21
卷期号:2 (3): 032007-032007
被引量:35
标识
DOI:10.1088/2515-7655/ab8b69
摘要
Abstract Zinc tin nitride (ZnSnN 2 ) is one of the emerging ternary nitride semiconductors considered for photovoltaic device applications due to its attractive and tunable material properties and earth abundance of constituent elements. Computational predictions of the material properties sparked experimental synthesis efforts, and currently there are a number of groups involved in ZnSnN 2 research. In this article, we review the progress of research and development efforts in ZnSnN 2 across the globe, and provide several highlights of accomplishments at the National Renewable Energy Laboratory (NREL). The interplay between computational predictions and experimental observations is discussed and exemplified by focusing on unintentional oxygen incorporation and the resulting changes in optical and electronic properties. The research progress over the past decade is summarized, and important future development directions are highlighted.
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