Greatly improved photocatalytic performance of BiVO4/MoS2 heterojunction with enhanced hole transfer and attack capability by ultrasonic agitation and in-situ hydrothermal method

In this work, BiVO4/MoS2 (BM) heterojunction was prepared by combining ultrasonic agitation exfoliation and in-situ growth method. Since flower-like MoS2 comprised a larger contact area with pollutants, by decorating dewdrops-shaped BiVO4 on the flower-like MoS2, h+ on BiVO4 can be transferred to MoS2. Therefore, h+ with strong oxidizing ability enriched on MoS2 can effectively attack the pollutants and substantially improve the photocatalytic activity of the as-prepared heterojunction. The degradation rate of tetracycline with BiVO4/MoS2 heterojunction (68.83 % in 120 min) was 5.64 and 4.23 times that with pure MoS2 (12.19 %) and pure BiVO4 (16.26 %), respectively. This work provided a new idea for the construction of highly active MoS2-based heterojunctions.