Optimization on gate-recessed AlGaN/GaN HEMT with low damage etching technique

A systematic study of low damage etching recessed gate of AlGaN/GaN HEMT is performed adding a little flux of passivating gas C 2H 4 to the Cl 2/Ar inductively coupled plasma,and the Cl 2/Ar/C 2H 4 is optimized.The surface damage and degeneration of AlGaN are avoid and the etching resultant is removed from the surface of the recessed gate.The Schottky characteristics and gate control ability are improved and the low damage etching recessed gate technique is achieved.