材料科学
哈夫尼亚
钝化
铁电性
电容器
兴奋剂
光电子学
接口(物质)
工程物理
纳米技术
复合材料
电气工程
电压
陶瓷
电介质
立方氧化锆
工程类
图层(电子)
毛细管数
毛细管作用
作者
Jing Yang,Yufang Xie,Chunhua Zhu,Sixue Chen,Jianglin Wei,Yuan Liu,Mingming Chen,Dawei Cao
标识
DOI:10.1088/1361-6528/ad2f74
摘要
Abstract In recent times, there has been a notable surge of interests in hafnia (HfO2)-based ferroelectrics, primarily due to their remarkable ferroelectric properties employed in ultra-thin configurations, alongside their compatibility with the conventional CMOS manufacturing process. In order to harness the full potential of HfO2-based films for high-performance non-volatile memory applications, it is imperative to enhance their ferroelectric characteristics and durability. This study introduces a straightforward approach aimed at augmenting the ferroelectric performance of HfxZr1-xO2 (HZO) films deposited on silicon (Si) substrates through the engineering of oxygen vacancies (VO). The results of this endeavor demonstrate a significant enhancement in ferroelectric performance, characterized by a 2Pr value of 47 µC/cm2 and impressive endurance, enduring up to 108 cycles under an 8 MV/cm electric field without the need of a wake-up process. This marked improvement can be attributed to a dual-pronged approach, involving the incorporation of an Al2O3 interlayer and the introduction of Al atoms into the HZO film. The Al2O3 interlayer primarily serves to mitigate the presence of oxygen vacancies at the interface, while the introduction of Al dopants elevates the concentration of oxygen vacancies within the bulk material. This modulation of oxygen vacancy concentration proves instrumental in facilitating the formation of a ferroelectric oⅢ phase within the HZO-based films, thereby further augmenting their ferroelectric performance. This innovative and effective strategy offers an alternative avenue for enhancing the ferroelectric properties of materials characterized by a fluorite crystal structure.
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