Straddling SnSe2/SnS2 van der Waals tunneling heterostructures for high performance broadband photodetectors

A SnSe 2 /SnS 2 /h-BN/graphene vdW tunneling device is fabricated with a high on/off ratio of more than 10 7 . Direct tunneling is the dominant mechanism at the gate voltage of 1 V.