量子阱
量子隧道
阴极发光
超短脉冲
半导体
可靠性(半导体)
光致发光
载流子寿命
半导体激光器理论
材料科学
激光器
光电子学
计算机科学
物理
光学
量子力学
发光
功率(物理)
硅
作者
Fuyi Cao,Zhan Su,Cong Wang,Yuhao Chen,Guoen Weng,C. Wang,Xiaobo Hu,Hidefumi Akiyama,Junhao Chu,Shaoqiang Chen
摘要
We propose an approach to elucidate carrier dynamics by developing a robust rate equation model capable of explaining carrier dynamics in a dual-well system. To experimentally validate the accuracy and reliability of our model, we utilized a combination of time-resolved photoluminescence and spatially resolved cathodoluminescence measurements. The integration of these complementary techniques allowed us to thoroughly investigate the spectral characteristics in both wells, revealing distinct features attributed to carrier tunneling and transport effects and verifying the predictive ability of the model. This validation process not only confirms the model's accuracy under both coupled and uncoupled conditions but also highlights its potential applicability to quantum-well-based semiconductor lasers. Overall, our study not only advances our understanding of carrier dynamics in quantum wells but also introduces a versatile and reliable tool for designing and simulating ultrafast semiconductor lasers.
科研通智能强力驱动
Strongly Powered by AbleSci AI