非晶硅
材料科学
钝化
硅
开路电压
降级(电信)
异质结
晶体硅
光电子学
无定形固体
光伏系统
图层(电子)
化学工程
纳米技术
电压
化学
电气工程
结晶学
工程类
作者
Xiaodong Li,Yuhao Yang,Kai Jiang,Shenglei Huang,Wenjie Zhao,Zhenfei Li,Guangyuan Wang,Anjun Han,Jian Yu,Dongdong Li,Fanying Meng,Liping Zhang,Zhengxin Liu,Wenzhu Liu
摘要
Abstract Silicon‐based photovoltaic (PV) modules suffer from potential‐induced degradation (PID) caused by sodium (Na) permeation, which is present in large quantities in soda‐lime glass. Here, we report that Na atoms can decrease the performance of amorphous/crystalline silicon heterojunction (SHJ) solar cells without the help of a voltage bias. The three degradation stages are investigated in this work. First, H 2 O molecules open channels for Na transport in the transparent conductive oxide (TCO), while the device performance remains almost unchanged. Next, when Na atoms reach the boron‐doped hydrogenated amorphous silicon ( p ‐a‐Si:H), the field passivation is poisoned, leading to a great decline in the fill factor (FF), whereas the open‐circuit voltage ( V oc ) only slightly declines. Finally, Na atoms further diffuse into the intrinsic a‐Si:H layer and c‐Si surface, resulting in a substantial decrease in V oc . These findings have important implications for the installation of SHJ solar modules in Na‐abundant environments. As a feasible solution, we demonstrate that a compact SiO 2 thin film can efficiently prevent H 2 O molecules from penetrating into the TCO layer and therefore guarantee a long‐term stable operation of SHJ solar cells.
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