Tuning magnetotransport properties through chemical substitution in Pr- and Sm-doped NdRuO3 thin films

We have investigated the magnetotransport properties for solid-solution thin films of ${\mathrm{Nd}}_{1\ensuremath{-}x}{\mathrm{Pr}}_{x}{\mathrm{RuO}}_{3}$ and ${\mathrm{Nd}}_{1\ensuremath{-}y}{\mathrm{Sm}}_{y}{\mathrm{RuO}}_{3}$ prepared through a solid phase epitaxy. It is found that the peculiar magnetotransport properties that emerge in ${\mathrm{NdRuO}}_{3}$ are modified by the systematic control of the electron correlation strength through the tuning of the bandwidth as well as in the total angular momentum $J$ of rare earth magnetic ions. The transition from metal to insulator is observed with increasing the concentration $y$ of smaller ${\mathrm{Sm}}^{3+}$ in ${\mathrm{Nd}}_{1\ensuremath{-}y}{\mathrm{Sm}}_{y}{\mathrm{RuO}}_{3}$, while ${\mathrm{Nd}}_{1\ensuremath{-}x}{\mathrm{Pr}}_{x}{\mathrm{RuO}}_{3}$ is kept metallic with increasing $x$ for larger ${\mathrm{Pr}}^{3+}$. An anomalous Hall effect is observed for all the conducting samples with the maximum Hall angle appearing for ${\mathrm{NdRuO}}_{3}$. The topological Hall effect observed for ${\mathrm{NdRuO}}_{3}$ gradually diminishes with increasing the doping concentrations $x$ and $y$.