光电效应
光致发光
异质结
材料科学
带隙
光电子学
纳米-
光电探测器
纳米技术
复合材料
作者
Xiaoshu Zhou,Xiaoxuan Li,Lichun Zhang,Fusong Yan,Cheng Wang,Shunli He,Xinbo Chu,Fangchao Zhao
标识
DOI:10.1016/j.jcis.2022.02.118
摘要
CsPbI3 with suitable bandgap (∼1.73 eV) and excellent photoelectric performance are considered promising candidates for new-generation photovoltaic and photoelectric devices. However, the phase instability of CsPbI3 hinders its application in photoelectric devices. In this study, cubic phase CsPbI3 nano-bricks with high stability are prepared on Si substrates by catalyst-freehigh-pressure pulsedlaser deposition.Theeffectsofthetarget-substrate distance on the morphological, structural and photoluminescence propertiesofCsPbI3 nano-bricks are investigated. CsPbI3 nano-bricks exhibits excellent long-term stability for 12 months, which can be attributed to the smaller lattice mismatch between Si (100) and CsPbI3 (100). Furthermore, the photodetector based on CsPbI3/n-Si heterojunction exhibited obvious spectral response in the red band of 710 nm. This work provides a novel idea for the preparation of photoelectric devices with cubic CsPbI3.
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