Lv5
1190 积分 2023-12-18 加入
Iron–acceptor pairs in silicon: Structure and formation processes
7天前
已完结
铁掺杂对不同导电类型硅材料电阻率的影响
8天前
已完结
Analytical Modeling of High-Voltage 4H-SiC Junction Barrier Schottky (JBS) Rectifiers
2个月前
已完结
Faraday-Cup Monitors for High-Energy Electron Beams
2个月前
已关闭
A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs
2个月前
已完结
Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting
2个月前
已完结
Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs
2个月前
已完结
Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT
2个月前
已完结
Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs
2个月前
已完结
Shallow states at SiO2/4H-SiC interface on (112̄0) and (0001) faces
2个月前
已完结
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