Lv5
910 积分 2024-04-22 加入
第三代半导体从业者
Study of Effect of Coil Movement on Growth Conditions of SiC Crystal
2天前
已完结
Numerical design of induction heating in the PVT growth of SiC crystal
2天前
已完结
Difference of double Shockley-type stacking faults expansion in highly nitrogen-doped and nitrogen-boron co-doped n-type 4H-SiC crystals
4个月前
已完结
Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals
4个月前
已完结
Aggregation of carbon interstitials in silicon carbide: A theoretical study
4个月前
已完结
Carbon cluster emitters in silicon carbide
4个月前
已完结
Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
4个月前
已完结
Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
4个月前
已关闭
Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
4个月前
已关闭
Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC
5个月前
已完结
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