Lv3
330 积分 2023-07-19 加入
Enhanced Computational Study with Experimental Correlation on I–V Characteristics of Tantalum Oxide (TaOx) Memristor Devices in a 1T1R Configuration
2个月前
已完结
Overview of candidate device technologies for storage-class memory
2个月前
已关闭
From macro to microarchitecture: reviews and trends of SRAM-based compute-in-memory circuits
2个月前
已完结
Effect of Electrode Nanopatterning on the Functional Properties of Ta/TaOx/Pt Resistive Memory Devices
2个月前
已完结
Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices
2个月前
已完结
Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device
2个月前
已关闭
Effect of the bottom electrode on the digital and analog resistive switching behavior of SiNx-based RRAM
2个月前
已完结
Better FeRAM with antiferroelectric capacitors
2个月前
已完结
The magnetic anisotropy energy of 13-atom Fe-Pt, Co-Pt and Ni-Pt clusters
3个月前
已完结
Relativistic Effects in Platinum Nanocluster Catalysis: A Statistical Ensemble-Based Analysis
3个月前
已完结
皖公网安备34019202002308
