Lv1
60 积分 2024-05-09 加入
Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMOSs with the Body-Side Hetero-Junction Structure
5小时前
已关闭
RESURF Region Variation Induced Current Crowding Effect on HV p-LDMOS
5小时前
已关闭
ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect
5小时前
已关闭
Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors
3个月前
已完结
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor
3个月前
已关闭
Research on SEE mitigation techniques using back junction and p+ buffer layer in domestic non-DTI SiGe HBTs by TCAD*
3个月前
已关闭
Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor
3个月前
已完结
Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect
6个月前
已完结
Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT
6个月前
已完结
Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect
6个月前
已完结
皖公网安备34019202002308
