Lv01
0 积分 2024-07-20 加入
High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3/p-GaN Bipolar Heterojunctions
1小时前
待确认
High-Photoresponsivity Self-Powered a-, ε-, and β-Ga2O3/p-GaN Heterojunction UV Photodetectors with an In Situ GaON Layer by MOCVD
1小时前
已完结
Heteroepitaxial Growth of Single-Crystalline β-Ga2O3 on GaN/Al2O3 Using MOCVD
1小时前
已完结
Pinch-off driven near-ideal output characteristics of n-Ga2O3/p-GaN light effect transistor for UV photonics
2小时前
已完结
Performance limits of vertical GaN of conventional doped pn and natural polarization superjunction devices
28天前
已完结
Progress of GaN-Based E-mode HEMTs
30天前
已完结
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
30天前
已完结
Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
30天前
已完结
Study of GaN-based step-doping superjunction CAVET for further improvement of breakdown voltage and specific on-resistance
1个月前
已完结
Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions
1个月前
已完结
皖公网安备34019202002308
