Lv4
600 积分 2023-03-15 加入
2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer
1个月前
已完结
A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors
1个月前
已完结
1200V GaN Switches on Sapphire Substrate
1个月前
已完结
Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates
1个月前
已完结
Etching-Free Hydrogen Treatment p-GaN HEMT on Sapphire Substrate
1个月前
已完结
Method to Study Dynamic Depletion Behaviors in High-Voltage ($BV=1.4\ \text{kV}$) p-GaN Gate HEMT on Sapphire Substrate
1个月前
已完结
Progress of GaN-Based E-mode HEMTs
1个月前
已完结
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension
1个月前
已完结
1200V E-mode GaN Monolithic Integration Platform on Sapphire with Ultra-thin Buffer Technology
1个月前
已完结
Improvement of electrical performance in Normally-Off GaN MOSFET with regrown AlGaN layer on the Source/Drain region
2个月前
已完结
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