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500 积分 2023-03-15 加入
A Performance Comparison of GaN FET and Silicon MOSFET
1小时前
待确认
Breakdown Voltage in Argon, Nitrogen, and Sulfur Hexafluoride Gases As a Function of Temperature
4个月前
已完结
Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs
5个月前
已完结
The Modulation Effect of LPCVD-Si x N y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure
5个月前
已完结
Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO$_\text{2}$-GaN-Interface
5个月前
已完结
Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices
5个月前
已完结
Investigation of the Trap States and V th Instability in Normally-Off GaN MIS-FETs With LPCVD SiN x /PEALD AlN Gate Dielectric Stack and In Situ H2/N2 Plasma Pretreatment
5个月前
已完结
Improved LPCVD-SiNx/AlGaN/GaN MIS-HEMTs by using in-situ MOCVD-SiNx as an interface sacrificial layer
5个月前
已完结
Low-temperature characteristics and gate leakage mechanisms of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs
5个月前
已完结
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