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40 积分 2024-12-12 加入
Impact of Top SiO₂ Interlayer Thickness on Memory Window of Si Channel FeFET With TiN/SiO₂/Hf₀.₅Zr₀.₅O₂/SiOx/Si (MIFIS) Gate Structure
3天前
已完结
Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over 2×1013 cm−2
3个月前
已完结
Optimized MFS Stack With N-Doped TiO2 Channel and La-Doped HfO2 Ferroelectric Layer for Highly Stable FeFETs
3个月前
已关闭
Improved Reliability and Read Latency Under Radiation Observed in HfZrOx Based p-FeFETs With AlON Interfacial Layer
3个月前
已完结
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