Lv2
150 积分 2023-03-09 加入
Study on the Mechanism of Facet Formation Based on the Shape of Temperature Field
2天前
已完结
Defect formation during the initial stage of physical vapor transport growth of 4H–SiC in the Formula Not Shown direction
10个月前
已关闭
半导体碳化硅中位错的识别及其在单晶生长过程中的演变
10个月前
已完结
基于碳化硅衬底的宽禁带半导体外延
10个月前
已完结
SiC单晶基平面位错和微管缺陷的研究
10个月前
已完结
Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals
1年前
已完结
Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
1年前
已关闭
Numerical simulation of a novel method for PVT growth of SiC by adding a graphite block
1年前
已关闭
皖公网安备34019202002308
