Lv11
50 积分 2024-11-08 加入
Thermal Boundary Resistance Reduction by Interfacial Nanopatterning for GaN-on-Diamond Electronics Applications
14天前
已完结
Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz
1个月前
已完结
N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz
1个月前
已完结
N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated Pout at 94 GHz
1个月前
已完结
Modulating microstructure and thermal properties of diamond/SiNx/GaN multilayer structure by diamond growth temperature
1个月前
已完结
Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
3个月前
已完结
All-around diamond for cooling power devices
5个月前
已完结
皖公网安备34019202002308
