Lv11
40 积分 2024-11-12 加入
Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping
1个月前
已完结
Physics-Based Models of 2DEG Density and Gate Capacitance for p-GaN/AlGaN/GaN Heterostructure
1个月前
已完结
Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates
1个月前
已完结
Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate
1个月前
已完结
High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 V
1个月前
已完结
High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability
1个月前
已完结
Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs
1个月前
已完结
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