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30 积分 2024-11-12 加入
Analyzing the Electrical Characteristics of P-gate Enhanced HEMT with C-doped Buffer Layer through Silvaco
6天前
已完结
A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications*
6天前
已完结
Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications
6天前
已完结
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
20天前
已完结
Investigation of AlGaN Channel HEMTs on β-Ga2O3 Substrate for High-Power Electronics
20天前
已完结
Performance Analysis of an Enhancement Mode Operated AlGaN/GaN MIS-HEMT Device with Ga2O3 as a Back Barrier
20天前
已完结
Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer
26天前
已完结
Optimization of Epitaxial Structures on GaN-on-Si(111) HEMTs with Step-Graded AlGaN Buffer Layer and AlGaN Back Barrier
1个月前
已完结
Research on RF performance of GaN HEMT with graded Al composition AlGaN back-barrier
1个月前
已完结
Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone
1个月前
已完结
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