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🔥 科研通第二届『
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📚 中科院2025期刊分区📊 已更新
英俊谷秋
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Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics
18小时前
待确认
Vertical oxide thin-film transistor with interfacial oxidation
4天前
已完结
Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O
4天前
已完结
Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer
4天前
已完结
Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2 gate insulator
4天前
已完结
Improving the electrical performance of vertical thin-film transistor by engineering its back-channel interface
4天前
已完结
Research Progress of Vertical Channel Thin Film Transistor Device
7天前
已完结
Scaling Benefits for Active and Gate Insulator of Vertical Channel Thin-Film Transistors Using Atomic Layer Deposited InGaZnO Channel
7天前
已完结
High-k dielectric based high performance vertical organic thin film transistor for flexible low power applications
7天前
已完结
22‐1: Invited Paper: About a Trench Oxide TFT
7天前
已完结
Discharge reaction mechanism of room-temperature sodium–sulfur battery with tetra ethylene glycol dimethyl ether liquid electrolyte
2个月前
已采纳
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