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90 积分 2025-02-07 加入
Photoelectric, optical and microstructural characterization of thin palladium silicide (Pd2Si) layers fabricated by magnetron sputtering from a stoichiometric target
1天前
待确认
Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown
1天前
已完结
Latest progress in gallium-oxide electronic devices
1天前
待确认
3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN
3天前
已完结
Vertical GaN Shottky barrier diode with thermally stable TiN anode*
8天前
已完结
First‐Principles Study of Schottky Barrier Heights on Metal/4H‐SiC Polar Interfaces
10天前
已完结
Vertical GaN Shottky barrier diode with thermally stable TiN anode*
14天前
已完结
Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer
16天前
已完结
High temperature (500 °C) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on β -Ga2O3
25天前
已完结
Elevated barrier height originated from electric dipole effect and improved breakdown characteristics in PtOx/β-Ga2O3 Schottky barrier diodes
25天前
已完结
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