Lv11
30 积分 2024-11-05 加入
Single event transient analysis of isolation problems for the high side devices in a 0.18μm BCD Process
13小时前
已完结
Impact of Dual-Tone Interference on an Automotive Smart Power High-Side Switch using Direct Power Injection
13小时前
已完结
GaN on Engineered Bulk Si (GaN-on-EBUS) Substrate for Monolithic Integration of High-/Low-Side Switches in Bridge Circuits
13小时前
已完结
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