Lv615
2440 积分 2020-08-31 加入
Power Cu metallization for future power devices — Process integration concept and reliability
4天前
已完结
Building blocks of past, present and future BCD technologies
1个月前
已完结
A Compact and Cost-efficient Edge Termination Design for High Voltage 4H-SiC Devices
2个月前
已完结
TCAD Investigation of Differently Doped DLC Passivation for Large-Area High-Power Diodes
2个月前
已完结
A multiple-floating-zone-assisted graded-step-JTE for high-voltage 4H-SiC GTO thyristor
2个月前
已完结
Detailed Analysis on Determining Effective Dose for Various JTE-Based Edge Terminations Utilized on 4H-SiC Power Devices
2个月前
已完结
A Novel Junction Termination Technique with Excellent Cost-Performance and Extraordinary Anti-Charge-Deviation Ability
2个月前
已完结
Design and Process Simulation on High Voltage VDMOS
2个月前
已完结
Failure Analysis and Reliability Improvement of the Corner Region of Variation Lateral Doping Termination
2个月前
已完结
Hybrid Junction Termination Consisting of a Variation Lateral Doping Structure and a Spiral Polysilicon Resistive Field Plate
2个月前
已完结
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