Lv667
2100 积分 2020-08-31 加入
A Compact and Cost-efficient Edge Termination Design for High Voltage 4H-SiC Devices
27天前
已完结
TCAD Investigation of Differently Doped DLC Passivation for Large-Area High-Power Diodes
27天前
已完结
A multiple-floating-zone-assisted graded-step-JTE for high-voltage 4H-SiC GTO thyristor
27天前
已完结
Detailed Analysis on Determining Effective Dose for Various JTE-Based Edge Terminations Utilized on 4H-SiC Power Devices
27天前
已完结
A Novel Junction Termination Technique with Excellent Cost-Performance and Extraordinary Anti-Charge-Deviation Ability
27天前
已完结
Design and Process Simulation on High Voltage VDMOS
1个月前
已完结
Failure Analysis and Reliability Improvement of the Corner Region of Variation Lateral Doping Termination
1个月前
已完结
Hybrid Junction Termination Consisting of a Variation Lateral Doping Structure and a Spiral Polysilicon Resistive Field Plate
1个月前
已完结
Fabrication and Optimization of a High-Reliability 700 V Super-Junction MOSFET with Segmented P-Buried RESURF Termination
1个月前
已完结
A Source Segmented LDMOS Structure for Improving Single Event Burnout Tolerance Based on High-Voltage BCD Process
1个月前
已完结
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