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Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy
1天前
已完结
Zwitterion‐Functionalized SnO 2 Substrate Induced Sequential Deposition of Black‐Phase FAPbI 3 with Rearranged PbI 2 Residue
10个月前
已完结
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
1年前
已关闭
Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN
1年前
已完结
Determination of CN deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach
1年前
已完结
Photoluminescence from defects in GaN
1年前
已完结
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
1年前
已完结
Overcoming the compensation of acceptors in GaN:Mg by defect complex formation
1年前
已完结
Ohmic co-doped GaN/InGaN tunneling diode grown by MOCVD
1年前
已完结
Determination of Mg acceptor concentration in GaN through photoluminescence
1年前
已完结
Emerging presodiation strategies for long-life sodium-ion batteries
1年前
已采纳
新疆百灵山铁矿床石榴石稀土元素地球化学特征研究
1年前
已采纳
电子化学品技术发展分析
1年前
已采纳
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