Lv5
1130 积分 2020-04-03 加入
Investigation of the Indium migration mechanism in the growth of InGaN quantum wells by MOCVD
1年前
已完结
Suppression of V-pits formation in InGaN layer by stepped growth with annealing interval
2年前
已完结
Effect of spiral-like islands on structural quality, optical and electrical performance of InGaN/GaN heterostructures grown by metal organic chemical vapour deposition
2年前
已完结
Improved LED output power and external quantum efficiency using InGaN templates
2年前
已完结
InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer
2年前
已完结
N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition
2年前
已完结
Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination
2年前
已完结
Enhancement in electrical and optical properties of field-effect passivated GaN blue light emitting diodes
2年前
已完结
Effects of pulsed Al injection on InGaN/GaN multi-quantum well structures grown by MOCVD
2年前
已完结
Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage
2年前
已完结
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