薄脆饼
阳极连接
晶片键合
材料科学
粘结强度
产量(工程)
粘结强度
复合材料
融合
纳米技术
胶粘剂
图层(电子)
语言学
哲学
作者
Nhi N. Trinh,Leslie A. Simms,Bradley S. Chew,Alexander Weinstein,Valeria La Saponara,Mitchell M. McCartney,Nicholas J. Kenyon,Cristina E. Davis
出处
期刊:Micromachines
[MDPI AG]
日期:2022-11-02
卷期号:13 (11): 1892-1892
被引量:3
摘要
A bonding process was developed for glass-to-glass fusion bonding using Borofloat 33 wafers, resulting in high bonding yield and high flexural strength. The Borofloat 33 wafers went through a two-step process with a pre-bond and high-temperature bond in a furnace. The pre-bond process included surface activation bonding using O2 plasma and N2 microwave (MW) radical activation, where the glass wafers were brought into contact in a vacuum environment in an EVG 501 Wafer Bonder. The optimal hold time in the EVG 501 Wafer bonder was investigated and concluded to be a 3 h hold time. The bonding parameters in the furnace were investigated for hold time, applied force, and high bonding temperature. It was concluded that the optimal parameters for glass-to-glass Borofloat 33 wafer bonding were at 550 °C with a hold time of 1 h with 550 N of applied force.
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