蓝宝石
脉冲激光沉积
材料科学
基质(水族馆)
分子束外延
透射率
薄膜
外延
衍射
光电子学
沉积(地质)
激光器
分析化学(期刊)
光学
纳米技术
化学
图层(电子)
物理
地质学
古生物学
色谱法
海洋学
生物
沉积物
作者
Fabi Zhang,Katsuhiko Saito,Tooru Tanaka,Mitsuhiro Nishio,Qixin Guo
标识
DOI:10.1016/j.jcrysgro.2013.11.022
摘要
Ga2O3 films were deposited on (0001) sapphire substrates by means of pulsed laser deposition (PLD). The influences of substrate temperature on crystal quality, surface morphology, and transmittance have been systematically investigated by means of X-ray diffraction, atomic force microscope and spectrophotometer. The results show that all of the films have high transmittance and smooth surface. The (−201) oriented β-Ga2O3 can be obtained at substrate temperature of 500 °C, which is lower than the growth temperature by other method such as molecular beam epitaxy, indicating PLD is a promising growth technology for growing high quality β-Ga2O3 films at low temperature.
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