响应度
材料科学
光电二极管
光电子学
光电探测器
氧化物
薄膜晶体管
无定形固体
半导体
金属
纳米技术
图层(电子)
有机化学
化学
冶金
作者
Seung‐Eon Ahn,Ihun Song,Sanghun Jeon,Youg Woo Jeon,Young Kim,Changjung Kim,Byungki Ryu,Je‐Hun Lee,Arokia Nathan,Sungsik Lee,Gyu‐Tae Kim,U‐In Chung
标识
DOI:10.1002/adma.201200293
摘要
The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays.
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