材料科学
退火(玻璃)
表面粗糙度
光电子学
半导体
表面光洁度
宽禁带半导体
位错
光子学
纳米技术
复合材料
作者
W. Malek,M. Bouzidi,N. Chaaben,Walid Belgacem,Abdullah S. Alshammari,Mansour Mohamed,Adama Mballo,Phuong Vuong,Jean‐Paul Salvestrini,A. Bouazizi,Mohammad Khaled Shakfa
标识
DOI:10.1016/j.apsusc.2024.159668
摘要
GaN-based semiconductor structures have been widely used in photonic, electronic, and optoelectronic devices. However, due to the lack of lattice-matched substrates for GaN, several schemes related to material growth and device structure, including surface roughening, have been proposed to improve the efficiency of GaN-based devices. In our work, we developed an experimental approach to achieving a controllable roughening of the GaN epilayer surface by thermal post-annealing. The degree of surface roughness, i.e., nanometric modification, is controlled by the number of annealing cycles. The samples were annealed at 1200 °C under N2 ambient. Under this condition, the first stage of GaN decomposition occurs. This annealing process led to the formation of Ga-rich GaN nanoparticles at the film surface with no significant change in the dislocation density. Furthermore, this treatment greatly decreases the compressive stress degree, resulting in a considerable improvement in the optical properties of the GaN samples.
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