激光阈值
光电子学
材料科学
激光器
半导体
半导体激光器理论
波长
光抽运
饱和(图论)
光学
物理
数学
组合数学
作者
O. Salehzadeh,Mehrdad Djavid,Nhung Hong Tran,I. Shih,Zetian Mi
出处
期刊:Nano Letters
[American Chemical Society]
日期:2015-07-27
卷期号:15 (8): 5302-5306
被引量:224
标识
DOI:10.1021/acs.nanolett.5b01665
摘要
The discovery of direct bandgap semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDCs) has opened a new era in flexible optoelectronic devices. Critical to this development is the realization of a semiconductor laser using the emerging 2D TMDCs. Here, by embedding 2D MoS2 at the interface between a free-standing microdisk and microsphere, we have demonstrated, for the first time, room-temperature lasing from 2D TMDCs. The devices exhibit multiple lasing peaks in the wavelength range of ∼600 to 800 nm. The threshold is measured to be ∼5 μW under continuous wave operation at room temperature. No saturation in the output power is measured for pump powers more than 2 orders of magnitude larger than the threshold. The superior performance is attributed to the large gain of 2D TMDCs and the strong coupling between the 2D MoS2 gain medium and optical modes in the unique optical cavity.
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