薄脆饼
远程等离子体
等离子体
湿法清洗
氢化物
基质(水族馆)
硅
分析化学(期刊)
干法蚀刻
材料科学
原位
氧化物
化学
化学工程
纳米技术
光电子学
图层(电子)
金属
蚀刻(微加工)
环境化学
化学气相沉积
冶金
有机化学
工程类
地质学
物理
海洋学
量子力学
作者
Jin Woo Park,Myeong Gyoon Chae,Doo San Kim,Won Oh Lee,Han Song,Changhwan Choi,Geun Young Yeom
标识
DOI:10.1088/1361-6463/aae182
摘要
Dry cleaning technology is an essential technique that can be applied to remove native oxide and various contaminants during the semiconductor manufacturing for nanoscale electronic devices. In this study, the in situ dry cleaning of silicon dioxide (SiO2) with low global warming potential (GWP) gas mixtures has been investigated by sequential process steps composed of the reaction of SiO2 surface by oxygen difluoride (OF2) (GWP: 30:1) could be obtained due to the formation of the highest HF concentration on the SiO2 surface at the OF2/NH3 (2:1) gas ratio. The compound layer formed during the reaction was (NH4)2SiF6 observed for a previously investigated NF3 (GWP: 17 200)/NH3 plasma, but the dry SiO2 cleaning rate and the etch selectivity over Si3N4 obtained by the OF2/NH3 plasma were higher than those by the optimized NF3/NH3 plasma. The effects of OF2/NH3 mixture dry cleaning on the electrical characteristics of metal-oxide-semiconductor (MOS) devices fabricated on the nano-scale trench patterned Si substrate with high aspect ratio were studied and compared with conventional wet and NF3/NH3 mixture dry cleaning-based devices. Compared with other cleaning methods, OF2/NH3 dry-cleaning shows the improved and reliable electrical characteristics such as sharper capacitance-voltage behavior, lower hysteresis, less interface trap charge and smaller contact resistivity. Therefore, it is believed that the in situ sequential dry SiO2 cleaning with the OF2/NH3 remote plasma can be applied as an essential cleaning method with extremely low GWP for fabricating next generation nano-scale devices.
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