铁电性
材料科学
外延
薄膜
凝聚态物理
放松(心理学)
磁畴壁(磁性)
应力松弛
表面粗糙度
基质(水族馆)
表面光洁度
光学
纳米技术
光电子学
复合材料
物理
磁化
心理学
社会心理学
蠕动
海洋学
图层(电子)
量子力学
地质学
磁场
电介质
作者
Patrycja Paruch,Jean‐Marc Triscone
摘要
Using high-resolution atomic force microscopy, we have shown extremely high stability of linear ferroelectric domains in epitaxial PbZr0.2Ti0.8O3 thin films heated up to 735°C, a significant advantage for technological applications. An elevated transition temperature ∼785°C is observed even in relatively thick (91nm) films, despite relaxation of in-plane film-substrate lattice-mismatch-induced strain. We also demonstrate the negligible role of the film surface in determining the written domain-wall configuration, both by direct comparison of the surface roughness with domain-wall position at successive thermal cycles, and by measurements of domain-wall dynamics before and after heating.
科研通智能强力驱动
Strongly Powered by AbleSci AI