纤锌矿晶体结构
纳米线
堆积
材料科学
晶体结构
杂质
体积分数
Crystal(编程语言)
结晶学
摩尔分数
晶体生长
纳米技术
六方晶系
化学
物理化学
复合材料
有机化学
计算机科学
程序设计语言
作者
Kimberly A. Dick,Philippe Caroff,Jessica Bolinsson,Maria E. Messing,Jonas Johansson,Knut Deppert,Reine Wallenberg,Lars Samuelson
标识
DOI:10.1088/0268-1242/25/2/024009
摘要
In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All six of these materials exhibit a cubic zinc blende structure in bulk, but twin planes and stacking faults, as well as a hexagonal wurtzite structure, are commonly observed in nanowires. Parameters which may affect the crystal structure include growth temperature and pressure, precursor molar fraction and V/III ratio, nanowire diameter and surface density, and impurity atoms. We will focus on temperature, precursor molar fraction and V/III ratio. Our observations are compared to previous reports in the literature of the III–V nanowire crystal structure, and interpreted in terms of existing models. We propose that changes in the crystal structure with growth parameters are directly related to changes in the stable side facets.
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